Quantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing

dc.contributor.author	Wang, L.
dc.contributor.author	Asempah, I.
dc.contributor.author	Dong, S. T.
dc.contributor.author	Yin, P. P.
dc.contributor.author	Jin, L.
dc.date.accessioned	2023-01-19T14:32:24Z
dc.date.available	2023-01-19T14:32:24Z
dc.date.issued	2017
dc.identifier.other	10.1016/j.apsusc.2016.12.061
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S0169433216327787
dc.identifier.uri	http://atuspace.atu.edu.gh:8080/handle/123456789/2513
dc.description.abstract	It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·αE/0.8)2. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Applied Surface Science	en_US
dc.relation.ispartofseries	vol;399
dc.subject	Electric field intensity	en_US
dc.subject	Atom diffusion	en_US
dc.subject	Annealing	en_US
dc.title	Quantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing	en_US
dc.type	Article	en_US

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