Wang, L.Asempah, I.Dong, S. T.Yin, P. P.Jin, L.2023-01-192023-01-19201710.1016/j.apsusc.2016.12.061https://www.sciencedirect.com/science/article/abs/pii/S0169433216327787http://atuspace.atu.edu.gh:8080/handle/123456789/2513It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·αE/0.8)2. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities.en-USElectric field intensityAtom diffusionAnnealingArticle