Quantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing

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dc.contributor.authorWang, L.
dc.contributor.authorAsempah, I.
dc.contributor.authorDong, S. T.
dc.contributor.authorYin, P. P.
dc.contributor.authorJin, L.
dc.date.accessioned2023-01-19T14:32:24Z
dc.date.available2023-01-19T14:32:24Z
dc.date.issued2017
dc.description.abstractIt has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·αE/0.8)2. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities.en_US
dc.identifier.other10.1016/j.apsusc.2016.12.061
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0169433216327787
dc.identifier.urihttp://atuspace.atu.edu.gh:8080/handle/123456789/2513
dc.language.isoen_USen_US
dc.publisherApplied Surface Scienceen_US
dc.relation.ispartofseriesvol;399
dc.subjectElectric field intensityen_US
dc.subjectAtom diffusionen_US
dc.subjectAnnealingen_US
dc.titleQuantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealingen_US
dc.typeArticleen_US

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