Wang, L.; Asempah, I.; Dong, S. T.; Yin, P. P.; Jin, L.
(Applied Surface Science, 2017)
It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient ...