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Self-Formed Diffusion Layer in Cu (Re) Alloy Film for Barrierless Copper

Show simple item record Cheng, B. Chen, H. Asempah, I. Wang, J. Zhu, Y. Wan, J. Qiao, Y. 2023-03-20T13:41:25Z 2023-03-20T13:41:25Z 2022
dc.identifier.other 10.3390/coatings12050613
dc.description.abstract The barrier properties and diffusion behavior of Cu(Re) alloy films were studied. The films were deposited onto barrierless SiO2/Si by magnetron sputtering. X-ray diffraction patterns and electric resistivity results proved that the Cu(Re) alloy films without a barrier layer were thermally stable up to 550 °C. Transmission electron microscopy images and energy-dispersive spectrometry employing scanning transmission electron microscopy provided evidence for a self-formed Re-enriched diffusion layer between the Cu(Re) alloy and SiO2/Si substrate. Furthermore, the chemical states of Re atoms at the Cu(Re)/SiO2 interface were analyzed by X-ray photoemission spectroscopy. The self-formed diffusion layer was found to be composed of Re metal, ReO, ReO2 and ReO3. At 650 °C, the Cu(Re) layer was completely destroyed due to atom diffusion. The low electrical resistivity in combination with the high thermal stability suggests that the Cu(Re) alloy could be the ultimate Cu interconnect diffusion barrier. en_US
dc.language.iso en_US en_US
dc.publisher Coatings en_US
dc.relation.ispartofseries vol.;12
dc.subject diffusion barrier en_US
dc.subject Cu interconnect en_US
dc.subject self-formed en_US
dc.subject Cu(Re) alloy en_US
dc.title Self-Formed Diffusion Layer in Cu (Re) Alloy Film for Barrierless Copper en_US
dc.type Article en_US

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