| dc.contributor.author |
Wang, L. |
|
| dc.contributor.author |
Asempah, I. |
|
| dc.contributor.author |
Dong, S. T. |
|
| dc.contributor.author |
Yin, P. P. |
|
| dc.contributor.author |
Jin, L. |
|
| dc.date.accessioned |
2023-01-19T14:32:24Z |
|
| dc.date.available |
2023-01-19T14:32:24Z |
|
| dc.date.issued |
2017 |
|
| dc.identifier.other |
10.1016/j.apsusc.2016.12.061 |
|
| dc.identifier.uri |
https://www.sciencedirect.com/science/article/abs/pii/S0169433216327787 |
|
| dc.identifier.uri |
http://atuspace.atu.edu.gh:8080/handle/123456789/2513 |
|
| dc.description.abstract |
It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·αE/0.8)2. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities. |
en_US |
| dc.language.iso |
en_US |
en_US |
| dc.publisher |
Applied Surface Science |
en_US |
| dc.relation.ispartofseries |
vol;399 |
|
| dc.subject |
Electric field intensity |
en_US |
| dc.subject |
Atom diffusion |
en_US |
| dc.subject |
Annealing |
en_US |
| dc.title |
Quantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing |
en_US |
| dc.type |
Article |
en_US |